K3307
Overview
- Super low on-state resistance: RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 14 mΩ MAX. (VGS = 4.0 V, ID = 35 A)
- Low Ciss: Ciss = 4650 pF TYP.
- Built-in gate protection diode
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |