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K3307 - SWITCHING N-CHANNEL POWER MOSFET

General Description

designed for high current switching applications.

Key Features

  • Super low on-state resistance: RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 14 mΩ MAX. (VGS = 4.0 V, ID = 35 A).
  • Low Ciss: Ciss = 4650 pF TYP.
  • Built-in gate protection diode.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
K3304 2SK3304
K3306 SWITCHING N-CHANNEL POWER MOS FET
K3322 2SK3322
K3324 2SK3324
K3326 2SK3326

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3307 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3307 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 14 mΩ MAX. (VGS = 4.0 V, ID = 35 A) • Low Ciss: Ciss = 4650 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE 2SK3307 TO-3P (TO-3P) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS 60 V Gate to Source Voltage VGSS(AC) ±20 V Drain Current (DC) Drain Current (pulse) Note1 ID(DC) ±70 A ID(pulse) ±280 A Total Power Dissipation (TC = 25°C) PT1 120 W Total Power Dissipation (TA = 25°C) PT2 3.