* Low on-resistance RDS(on)1 = 21 mΩ (MAX.) (VGS = 10 V, ID = 10 A) RDS(on)2 = 33 mΩ (MAX.) (VGS = 4.5 V, ID = 10 A) RDS(on)3 = 43 mΩ (MAX.) (VGS = 4.0 V, ID = 10 A) .

of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device befor.

The 2SK3366 is N -Channel M OS Field Effect T ransistor designed for D C/DC converter application of notebook computers. FEATURES
* Low on-resistance RDS(on)1 = 21 mΩ (MAX.) (VGS = 10 V, ID = 10 A) RDS(on)2 = 33 mΩ (MAX.) (VGS = 4.5 V, ID = 10 A.

K3362-01

K3362TC360

K3362TC380

K3362TC400

K3362TC420

K3362TD360

K3362TD380

K3362TD400

K3362TD420

K3362TT360

K3362TT380

K3362TT400

K3362TT420