MOS FIELD EFFECT TRANSISTOR
N-CHANNEL POWER MOS FET
The 2SK3386 is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
• Low On-state Resistance
5 RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 17 A)
5 RDS(on)2 = 36 mΩ MAX. (VGS = 4.0 V, ID = 17 A)
• Low Ciss : Ciss = 2100 pF TYP.
• Built-in Gate Protection Diode
• TO-251/TO-252 package
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
5 Drain Current (Pulse) Note1
5 Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
5 Single Avalanche Current Note2
5 Single Avalanche Energy Note2
–55 to +150
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
5 Channel to Case
Channel to Ambient
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14471EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.