K3480 Key Features
- Super low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = 10 V, ID = 25 A) RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 25
- Low Ciss: Ciss = 3600 pF TYP
- Built-in gate protection diode
| Manufacturer | Part Number | Description |
|---|---|---|
VBsemi |
K3480 | N-Channel MOSFET |