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K3484 - 2SK3484

General Description

The 2SK3484 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Low on-state resistance RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 8 A).
  • Low Ciss: Ciss = 900 pF TYP.
  • Built-in gate protection diode.
  • TO-251/TO-252 package (TO-251).

📥 Download Datasheet

More Datasheets from NEC (now Renesas Electronics)

Part Number Description
K3480 2SK3480
K3483 2SK3483
K3404 2SK3404
K3405 2SK3405
K3430 2SK3430
K3435 2SK3435
K3454 2SK3454
K3455 2SK3455
K3457 2SK3457
K3458 2SK3458

Full PDF Text Transcription for K3484 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K3484. For precise diagrams, tables, and layout, please refer to the original PDF.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3484 SWITCHING N-CHANNEL POWER MOS FET www.DataSheet4U.com DESCRIPTION The 2SK3484 is N-channel MOS Field Effect Transistor desi...

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DESCRIPTION The 2SK3484 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3484 2SK3484-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z) FEATURES • Low on-state resistance RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 8 A) • Low Ciss: Ciss = 900 pF TYP. • Built-in gate protection diode • TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2