MOS FIELD EFFECT TRANSISTOR
N-CHANNEL POWER MOS FET
The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics,
and designed for high voltage applications such as switching power supply, AC adapter.
• Low on-state resistance
RDS(on) = 11 Ω MAX. (VGS = 10 V, ID = 0.5 A)
• Low gate charge
QG = 5 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 1.0 A)
• Gate voltage rating : ±30 V
• Avalanche capability ratings
<R> ORDERING INFORMATION
Pure Sn (Tin)
Tube 70 p/tube
Tube 75 p/tube
Tape 2500 p/reel
TO-251 (MP-3-a) typ. 0.39 g
TO-251 (MP-3-b) typ. 0.34 g
TO-252 (MP-3ZK) typ. 0.27 g
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C) Note2 PT2
Single Avalanche Current Note3
Single Avalanche Energy Note3
−55 to +150
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Mounted on glass epoxy board of 40 mm × 40 mm × 1.6 mm
3. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18573EJ2V0DS00 (2nd edition)
Date Published June 2007 NS
Printed in Japan
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