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  NEC Electronic Components Datasheet  

K4070 Datasheet

2SK4070

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4070
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4070 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics,
and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
Low on-state resistance
RDS(on) = 11 Ω MAX. (VGS = 10 V, ID = 0.5 A)
Low gate charge
QG = 5 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 1.0 A)
Gate voltage rating : ±30 V
Avalanche capability ratings
<R> ORDERING INFORMATION
PART NUMBER
LEAD PLATING
2SK4070-S15-AY Note
2SK4070(1)-S27-AY Note
2SK4070-ZK-E1-AY Note
2SK4070-ZK-E2-AY Note
Pure Sn (Tin)
PACKING
Tube 70 p/tube
Tube 75 p/tube
Tape 2500 p/reel
PACKAGE
TO-251 (MP-3-a) typ. 0.39 g
TO-251 (MP-3-b) typ. 0.34 g
TO-252 (MP-3ZK) typ. 0.27 g
Note Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C) Note2 PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg
IAS
EAS
600
±30
±1.0
±4.0
22
1.0
150
55 to +150
0.8
38.4
V
V
A
A
W
W
°C
°C
A
mJ
(TO-251)
(TO-252)
Notes 1. PW 10 μs, Duty Cycle 1%
2. Mounted on glass epoxy board of 40 mm × 40 mm × 1.6 mm
3. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18573EJ2V0DS00 (2nd edition)
Date Published June 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006


  NEC Electronic Components Datasheet  

K4070 Datasheet

2SK4070

No Preview Available !

2SK4070
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 600 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±30 V, VDS = 0 V
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 0.5 A
VGS = 10 V, ID = 0.5 A
Input Capacitance
Ciss VDS = 10 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 150 V, ID = 0.5 A,
Rise Time
tr VGS = 10 V,
Turn-off Delay Time
td(off)
RG = 10 Ω
Fall Time
tf
Total Gate Charge
QG VDD = 450 V,
Gate to Source Charge
QGS VGS = 10 V,
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
ID = 1.0 A
IF = 1.0 A, VGS = 0 V
Reverse Recovery Time
trr IF = 1.0 A, VGS = 0 V,
Reverse Recovery Charge
Note Pulsed
Qrr di/dt = 100 A/μs
MIN. TYP. MAX. UNIT
100 μA
±100 nA
2.5 2.9 3.5
V
0.2 0.4
S
9.2 11
Ω
110 pF
50 pF
11 pF
7.5 ns
6 ns
11 ns
18 ns
5 nC
1 nC
2.8 nC
0.86 1.5
V
135 ns
285 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
2 Data Sheet D18785EJ2V0DS


Part Number K4070
Description 2SK4070
Maker NEC
Total Page 8 Pages
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