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MC-4R256CPE6C - Direct Rambus DRAM RIMM Module

Description

The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required.

Features

  • 184 edge connector pads with 1mm pad spacing.
  • 256 MB Direct RDRAM storage.
  • Each RDRAM® has 32 banks, for 512 banks total on module.
  • Gold plated contacts.
  • RDRAMs use Chip Scale Package (CSP).
  • Serial Presence Detect support.
  • Operates from a 2.5 V supply.
  • Low power and powerdown self refresh modes.
  • Separate Row and Column buses for higher efficiency.
  • Over Drive Factor (ODF) support The information in this do.

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Datasheet Details

Part number MC-4R256CPE6C
Manufacturer NEC
File Size 133.02 KB
Description Direct Rambus DRAM RIMM Module
Datasheet download datasheet MC-4R256CPE6C Datasheet

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Full PDF Text Transcription

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PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256CPE6C Direct RambusTM DRAM RIMMTM Module 256M-BYTE (128M-WORD x 16-BIT) Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required. MC-4R256CPE6C modules consists of sixteen 128M Direct Rambus DRAM (Direct RDRAM™) devices (µPD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and board design technologies.
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