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MC-4R128CEE6B Datasheet Direct Rambus Dram Rimm Module

Manufacturer: NEC (now Renesas Electronics)

Overview: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128CEE6B, 4R128CEE6C Direct RambusTM DRAM RIMMTM Module 128M-BYTE (64M-WORD x.

General Description

The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including puter memory, personal puters, workstations, and other applications where high bandwidth and low latency are required.

MC-4R128CEE6B, 4R128CEE6C modules consists of eight 128M Direct Rambus DRAM (Direct RDRAM™) devices (µPD488448).

These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits.

Key Features

  • 184 edge connector pads with 1mm pad spacing.
  • 128 MB Direct RDRAM storage.
  • Each RDRAM® has 32 banks, for 256 banks total on module.
  • Gold plated contacts.
  • RDRAMs use Chip Scale Package (CSP).
  • Serial Presence Detect support.
  • Operates from a 2.5 V supply.
  • Low power and powerdown self refresh modes.
  • Separate Row and Column buses for higher efficiency The information in this document is subject to change without notice.

More Datasheets from NEC (now Renesas Electronics)

Part Number Description
MC-4R128CEE6C Direct Rambus DRAM RIMM Module
MC-4R128CPE6C Direct Rambus DRAM RIMM Module
MC-4R192CPE6C Direct Rambus DRAM RIMM Module
MC-4R256CEE6B Direct Rambus DRAM RIMM Module
MC-4R256CEE6C Direct Rambus DRAM RIMM Module
MC-4R256CPE6C Direct Rambus DRAM RIMM Module
MC-4R64CEE6B Direct Rambus DRAM RIMM Module
MC-4R64CEE6C Direct Rambus DRAM RIMM Module
MC-4R64CPE6C Direct Rambus DRAM RIMM Module
MC-4R96CEE6B Direct Rambus DRAM RIMM Module

MC-4R128CEE6B Distributor