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MC-4R192CPE6C - Direct Rambus DRAM RIMM Module

General Description

The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required.

Key Features

  • 184 edge connector pads with 1mm pad spacing.
  • 192 MB Direct RDRAM storage.
  • Each RDRAM® has 32 banks, for 384 banks total on module.
  • Gold plated contacts.
  • RDRAMs use Chip Scale Package (CSP).
  • Serial Presence Detect support.
  • Operates from a 2.5 V supply.
  • Low power and powerdown self refresh modes.
  • Separate Row and Column buses for higher efficiency.
  • Over Drive Factor (ODF) support The information in this do.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
MC-4R128CEE6B Direct Rambus DRAM RIMM Module
MC-4R128CEE6C Direct Rambus DRAM RIMM Module
MC-4R128CPE6C Direct Rambus DRAM RIMM Module
MC-4R256CEE6B Direct Rambus DRAM RIMM Module
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-4R192CPE6C Direct RambusTM DRAM RIMMTM Module 192M-BYTE (96M-WORD x 16-BIT) Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required. MC-4R192CPE6C modules consists of twelve 128M Direct Rambus DRAM (Direct RDRAM™) devices (µPD488448). These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits. The use of Rambus Signaling Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and board design technologies.