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MC-4R64CEE6B Datasheet Direct Rambus Dram Rimm Module

Manufacturer: NEC (now Renesas Electronics)

Overview: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-4R64CEE6B, 4R64CEE6C Direct RambusTM DRAM RIMMTM Module 64M-BYTE (32M-WORD x.

General Description

The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other applications where high bandwidth and low latency are required.

MC-4R64CEE6B, 4R64CEE6C modules consists of four 128M Direct Rambus DRAM (Direct RDRAM™) devices (µPD488448).

These are extremely high-speed CMOS DRAMs organized as 8M words by 16 bits.

Key Features

  • 184 edge connector pads with 1mm pad spacing.
  • 64 MB Direct RDRAM storage.
  • Each RDRAM® has 32 banks, for 128 banks total on module.
  • Gold plated contacts.
  • RDRAMs use Chip Scale Package (CSP).
  • Serial Presence Detect support.
  • Operates from a 2.5 V supply.
  • Low power and powerdown self refresh modes.
  • Separate Row and Column buses for higher efficiency The information in this document is subject to change without notice.

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