*
* Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP., Ga = 15.5 dB TYP. at f = 4 GHz Gate Width: Wg = 280 Pm 0. 2 ORDERING INFORMATION PART NUMB.

The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems. 1 2.0 ± 0.2 2. PACKAGE DIMENSIONS (.

NE434S01-T1

NE434S01-T1B

NE41137

NE416

NE4210M01

NE4210S01

NE42484A

NE425S01

NE429M01

NE4558

NE46100

NE46134

NE46134-T1