HJ-FET Datasheet | Specifications & PDF Download

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE3240

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www.DataSheet4U.com C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz Noise Figure, NF

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE425S01 is a H

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DATA SHEET HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 is

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE3240

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32484A is a H

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE4210S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210S01 is a

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www.DataSheet4U.com ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz Noise Figure, NF (dB) NE321000

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32484A is a H

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DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKA

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PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE4210M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE

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www.DataSheet4U.com PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3509M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-

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ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE24283B (SPACE QUALIFIED) FEATURES • VERY LOW NOISE FIGURE: 0.6 dB TYP at 12 GHz • HIGH ASSOCIATED GAIN: 11.0 dB

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www.DataSheet4U.com HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor

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SUPER LOW NOISE HJ FET NE33200 FEATURES • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz Optimum Noise Figure, NFOPT (dB) 4 3.5 NOISE FIGURE & AS

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DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for middle power

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PRELIMINARY DATA SHEET N-CHANNEL GaAs HJ-FET NE6510379A 3 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510379A is a 3 W GaAs HJ-FET designed for m

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a He

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE3250

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