• Part: NE3521M04
  • Description: N-Channel GaAs HJ-FET
  • Manufacturer: Renesas
  • Size: 431.07 KB
Download NE3521M04 Datasheet PDF
Renesas
NE3521M04
NE3521M04 is manufactured by Renesas.
Data Sheet N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain Features R09DS0058EJ0100 Rev.1.00 Mar 19, 2013 - Low noise figure and high associated gain: NF = 0.85 dB TYP., Ga = 11 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 20 GHz NF = 0.9 dB TYP., Ga = 10.5 dB TYP. @VDS = 2 V, ID = 6mA, f = 20 GHz (Reference Value) - Flat-lead 4-pin thin-type super minimold (M04) package APPLICATIONS - DBS LNB gain-stage, Mix-stage - Low noise amplifier for microwave munication system ORDERING INFORMATION Part Number NE3521M04-T2 Order Number NE3521M04-T2-A Package Quantity Flat-lead 4-pin 3 kpcs/reel thin-type super minimold (M04) 15 kpcs/reel (Pb-Free) Marking V86 Supplying Form -...