NE3521M04 - N-Channel GaAs HJ-FET

Product Overview

Renesas

Part number	NE3521M04
Manufacturer	Renesas
File Size	431.07 KB
Description	N-Channel GaAs HJ-FET
Datasheet	NE3521M04 Datasheet
Additional preview pages of the NE3521M04 datasheet.

Rev.

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R09DS0058EJ0100 Rev.1.00 Mar 19, 2013.
Low noise figure and high associated gain: NF = 0.85 dB TYP. , Ga = 11 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 20 GHz NF = 0.9 dB TYP. , Ga = 10.5 dB TYP. @VDS = 2 V, ID = 6mA, f = 20 GHz (Reference Value).
Flat-lead 4-pin thin-type super minimold (M04) package.

NE350184C - HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)
NE3503M04 - C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER (California Eastern Labs)
NE3505M04 - HETERO JUNCTION FIELD EFFECT TRANSISITOR (California Eastern Labs)
NE3508M04 - HETERO JUNCTION FIELD EFFECT TRANSISITOR (California Eastern Labs)
NE3509M04 - L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)
NE3510M04 - HETERO JUNCTION FIELD EFFECT TRANSISTOR (CEL)
NE3511S02 - X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)
NE3512S02 - HETERO JUNCTION FIELD EFFECT TRANSISTOR (CEL)
NE3514S02 - K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)
NE3002-VA10A - Near edge thermal printhead (300 dots / inch) (Rohm)

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Published: Nov 10, 2013 |