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NE3521M04 - N-Channel GaAs HJ-FET

General Description

Rev.

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1.

Key Features

  • R09DS0058EJ0100 Rev.1.00 Mar 19, 2013.
  • Low noise figure and high associated gain: NF = 0.85 dB TYP. , Ga = 11 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 20 GHz NF = 0.9 dB TYP. , Ga = 10.5 dB TYP. @VDS = 2 V, ID = 6mA, f = 20 GHz (Reference Value).
  • Flat-lead 4-pin thin-type super minimold (M04) package.

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Datasheet Details

Part number NE3521M04
Manufacturer Renesas
File Size 431.07 KB
Description N-Channel GaAs HJ-FET
Datasheet download datasheet NE3521M04 Datasheet

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Full PDF Text Transcription (Reference)

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Data Sheet NE3521M04 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain FEATURES R09DS0058EJ0100 Rev.1.00 Mar 19, 2013 • Low noise figure and high associated gain: NF = 0.85 dB TYP., Ga = 11 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 20 GHz NF = 0.9 dB TYP., Ga = 10.5 dB TYP.