NE3516S02 Datasheet | Renesas

Data Sheet N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain Features R09DS0038EJ0100 Rev.1.00 Apr 18, 2012 - Low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 14 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 6 mA (Reference Value) - 4-pin Micro-X plastic (S02) package APPLICATIONS - X to Ku band DBS LNB - Other Ku band munication system ORDERING INFORMATION Part Number Order Number Package S02 package (Pb-Free) Quantity 2 kpcs/reel 10 kpcs/reel Marking P Supplying Form - 8 mm wide embossed taping - Pin 4 (Gate) faces the perforation side of the tape NE3516S02-T1C NE3516S02-T1C-A...