NE3516S02 - N-Channel GaAs HJ-FET

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Renesas

Part number	NE3516S02
Manufacturer	Renesas
File Size	143.00 KB
Description	N-Channel GaAs HJ-FET
Datasheet	NE3516S02 Datasheet
Additional preview pages of the NE3516S02 datasheet.

Rev.

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R09DS0038EJ0100 Rev.1.00 Apr 18, 2012.
Low noise figure and high associated gain NF = 0.35 dB TYP. , Ga = 14 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA NF = 0.35 dB TYP. , Ga = 13.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 6 mA (Reference Value).
4-pin Micro-X plastic (S02) package.

NE3510M04 - HETERO JUNCTION FIELD EFFECT TRANSISTOR (CEL)
NE3511S02 - X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)
NE3512S02 - HETERO JUNCTION FIELD EFFECT TRANSISTOR (CEL)
NE3514S02 - K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)
NE350184C - HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)
NE3503M04 - C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER (California Eastern Labs)
NE3505M04 - HETERO JUNCTION FIELD EFFECT TRANSISITOR (California Eastern Labs)
NE3508M04 - HETERO JUNCTION FIELD EFFECT TRANSISITOR (California Eastern Labs)
NE3509M04 - L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)
NE3002-VA10A - Near edge thermal printhead (300 dots / inch) (Rohm)

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Published: Nov 10, 2013 |