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NE3516S02 - N-Channel GaAs HJ-FET

General Description

Rev.

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1.

Key Features

  • R09DS0038EJ0100 Rev.1.00 Apr 18, 2012.
  • Low noise figure and high associated gain NF = 0.35 dB TYP. , Ga = 14 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA NF = 0.35 dB TYP. , Ga = 13.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 6 mA (Reference Value).
  • 4-pin Micro-X plastic (S02) package.

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Datasheet Details

Part number NE3516S02
Manufacturer Renesas
File Size 143.00 KB
Description N-Channel GaAs HJ-FET
Datasheet download datasheet NE3516S02 Datasheet

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Full PDF Text Transcription (Reference)

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Data Sheet NE3516S02 N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain FEATURES R09DS0038EJ0100 Rev.1.00 Apr 18, 2012 • Low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 14 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA NF = 0.35 dB TYP., Ga = 13.5 dB TYP.