• Part: NE3519M04
  • Description: N-channel GaAs HJ-FET
  • Manufacturer: Renesas
  • Size: 244.84 KB
Download NE3519M04 Datasheet PDF
Renesas
NE3519M04
NE3519M04 is manufactured by Renesas.
PreliminaryData Sheet N-channel GaAs HJ-FET, L to C Band Low Noise Features R09DS0008EJ0100 Rev.1.00 Oct 21, 2010 Amplifier - Low noise figure and high associated gain NF = 0.40 dB TYP., Ga = 18.5 dB TYP. @VDS = 2 V, ID = 10 mA, f = 2 GHz - Flat-lead 4-pin thin-type super minimold (M04) package APPLICATIONS - Satellite radio (SDARS, etc.) - Low noise amplifier for microwave munication system ORDERING INFORMATION Part Number NE3519M04-T2 NE3519M04-T2B Order Number NE3519M04-T2-A NE3519M04-T2B-A Package Flat-lead 4-pin thin-type super minimold (M04) (Pb-Free) Quantity 3 kpcs/reel 15 kpcs/reel Marking V85 Supplying Form - Embossed tape 8 mm wide - Pin 1 (Source), Pin 2...