NE3519M04 Description
PreliminaryData Sheet NE3519M04 N-channel GaAs HJ-FET, L to C Band Low Noise.
NE3519M04 Key Features
- Low noise figure and high associated gain NF = 0.40 dB TYP., Ga = 18.5 dB TYP. @VDS = 2 V, ID = 10 mA, f = 2 GHz
- Flat-lead 4-pin thin-type super minimold (M04) package