NE3520S03 Description
Data Sheet NE3520S03 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain.
NE3520S03 Key Features
- Low noise figure and high associated gain: NF = 0.65 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz, VDS = 2 V, ID = 10 mA
- K band Micro-X plastic (S03) package