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NE3520S03 - N-Channel GaAs HJ-FET

General Description

Rev.

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1.

Key Features

  • Low noise figure and high associated gain: NF = 0.65 dB TYP. , Ga = 13.5 dB TYP. @ f = 20 GHz, VDS = 2 V, ID = 10 mA.
  • K band Micro-X plastic (S03) package R09DS0029EJ0100 Rev.1.00 Oct 18, 2011.

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Datasheet Details

Part number NE3520S03
Manufacturer Renesas
File Size 232.81 KB
Description N-Channel GaAs HJ-FET
Datasheet download datasheet NE3520S03 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet NE3520S03 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain FEATURES • Low noise figure and high associated gain: NF = 0.65 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz, VDS = 2 V, ID = 10 mA • K band Micro-X plastic (S03) package R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 APPLICATIONS • 20 GHz band DBS LNB • Other K band communication system ORDERING INFORMATION Part Number NE3520S03-T1C Order Number NE3520S03-T1C-A Package S03 package (Pb-Free) Quantity 2 kpcs/reel Marking J Supplying Form • Embossed tape 8 mm wide • Pin 4 (Gate) face the perforation side of the tape NE3520S03-T1D NE3520S03-T1D-A 10 kpcs/reel Remark To order evaluation samples, please contact your nearby sales office.