Datasheet4U Logo Datasheet4U.com

NE334S01-T1 - C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

General Description

The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.

Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems.

Key Features

  • Super Low Noise Figure & High Associated Gain NF = 0.25 dB TYP. , Ga = 16.0 dB TYP. at f = 4 GHz Gate Width: Wg = 280 mm 1 2. 0 ± 0. 2.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems. 2.0 ± 0.2 PACKAGE DIMENSIONS (Unit: mm) FEATURES • • Super Low Noise Figure & High Associated Gain NF = 0.25 dB TYP., Ga = 16.0 dB TYP. at f = 4 GHz Gate Width: Wg = 280 mm 1 2. 0 ± 0. 2 ORDERING INFORMATION PART NUMBER NE334S01-T1 NE334S01-T1B SUPPLYING FORM Tape & reel 1000 pcs./reel Tape & reel 4000 pcs./reel MARKING C 4 3 0.65 TYP. 1. 2. 3. 4.