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NE334S01-T1B

Manufacturer: NEC (now Renesas Electronics)
NE334S01-T1B datasheet preview

Datasheet Details

Part number NE334S01-T1B
Datasheet NE334S01-T1B_NEC.pdf
File Size 74.21 KB
Manufacturer NEC (now Renesas Electronics)
Description C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE334S01-T1B page 2 NE334S01-T1B page 3

NE334S01-T1B Overview

The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another mercial systems. 2.0 ± 0.2 PACKAGE DIMENSIONS (Unit:.

NE334S01-T1B Key Features

  • Super Low Noise Figure & High Associated Gain NF = 0.25 dB TYP., Ga = 16.0 dB TYP. at f = 4 GHz Gate Width: Wg = 280 mm
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NE334S01-T1B Distributor

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