NE33284A - L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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NEC

Part number	NE33284A
Manufacturer	NEC
File Size	62.90 KB
Description	L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Datasheet	NE33284A Datasheet
Additional preview pages of the NE33284A datasheet.

The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.

Its excellent low noise and high associated gain make it suitable for GPS, TVRO and another commercial systems.

Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. , Ga = 15.0 dB TYP. at f = 4 GHz.
Gate Width: Wg = 280 µm 1.78 ±0.2 L U 2 L 3 L 4.

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NE350184C - HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)
NE3503M04 - C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER (California Eastern Labs)
NE3505M04 - HETERO JUNCTION FIELD EFFECT TRANSISITOR (California Eastern Labs)
NE3508M04 - HETERO JUNCTION FIELD EFFECT TRANSISITOR (California Eastern Labs)
NE3509M04 - L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)

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Published: May 12, 2005 |