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NE33284A-T1 - L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

General Description

The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.

Its excellent low noise and high associated gain make it suitable for GPS, TVRO and another commercial systems.

Key Features

  • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. , Ga = 15.0 dB TYP. at f = 4 GHz.
  • Gate Width: Wg = 280 µm 1.78 ±0.2 L U 2 L 3 L 4.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
NE33284A-T1A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE33284A-SL L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE33284 L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE33284A L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for GPS, TVRO and another commercial systems. L 1.78 ±0.2 1 PACKAGE DIMENSIONS (Unit: mm) FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP., Ga = 15.0 dB TYP. at f = 4 GHz • Gate Width: Wg = 280 µm 1.78 ±0.2 L U 2 L 3 L 4 ORDERING INFORMATION SUPPLYING FORM STICK Tape & reel PART NUMBER NE33284A-SL NE33284A-T1 NE33284A-T1A LEAD LENGTH L = 1.0 ±0.