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NE3210S01 Datasheet X To Ku Band Super Low Noise Amplifer N-channel Hj-fet

Manufacturer: NEC (now Renesas Electronics)

Overview: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL.

General Description

The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

Its excellent low noise and associated gain make it suitable for DBS and another mercial systems.

Key Features

  • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz.
  • Gate Length: Lg ≤ 0.20 µm.
  • Gate Width : Wg = 160 µm.

NE3210S01 Distributor