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NE3210S01

Manufacturer: NEC (now Renesas Electronics)

NE3210S01 datasheet by NEC (now Renesas Electronics).

NE3210S01 datasheet preview

NE3210S01 Datasheet Details

Part number NE3210S01
Datasheet NE3210S01_NEC.pdf
File Size 62.71 KB
Manufacturer NEC (now Renesas Electronics)
Description X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
NE3210S01 page 2 NE3210S01 page 3

NE3210S01 Overview

The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another mercial systems.

NE3210S01 Key Features

  • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz
  • Gate Length: Lg ≤ 0.20 µm
  • Gate Width : Wg = 160 µm

NE3210S01 from other manufacturers

View NE3210S01 datasheet index

Brand Logo Part Number Description Other Manufacturers
CEL Logo NE3210S01 HETERO JUNCTION FIELD EFFECT TRANSISTOR CEL
NEC (now Renesas Electronics) logo - Manufacturer

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