NE3210S01 Datasheet | NEC

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another mercial systems. Features - Super Low Noise Figure & High Associated Gain NF = 0.35 d B TYP. Ga = 13.5 d B TYP. at f = 12 GHz - Gate Length: Lg ≤ 0.20 µm - Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number NE3210S01-T1 NE3210S01-T1B Supplying Form Tape & reel 1 000 pcs./reel Tape & reel 4 000 pcs./reel Marking K Remark For sample order, please contact your local NEC sales office. (Part number for sample order:...