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NE3210S01 - X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

General Description

The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.

Key Features

  • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz.
  • Gate Length: Lg ≤ 0.20 µm.
  • Gate Width : Wg = 160 µm.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
NE321000 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
NE32400 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE32484A-SL C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE32484A-T1 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz • Gate Length: Lg ≤ 0.20 µm • Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number NE3210S01-T1 NE3210S01-T1B Supplying Form Tape & reel 1 000 pcs./reel Tape & reel 4 000 pcs./reel Marking K Remark For sample order, please contact your local NEC sales office.