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NE3210S01 Datasheet Hetero Junction Field Effect Transistor

Manufacturer: CEL

Overview: Drop-InDISReplacement:CONTICE3512K2NUED DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL.

Datasheet Details

Part number NE3210S01
Manufacturer CEL
File Size 729.40 KB
Description HETERO JUNCTION FIELD EFFECT TRANSISTOR
Datasheet NE3210S01-CEL.pdf

General Description

The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

Its excellent low noise and associated gain make it suitable for DBS and another mercial systems.

Key Features

  • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz.
  • Gate Length: Lg ≤ 0.20 µm.
  • Gate Width : Wg = 160 µm.

NE3210S01 Distributor