NE3210S01 datasheet by CEL.
| Part number | NE3210S01 |
|---|---|
| Datasheet | NE3210S01-CEL.pdf |
| File Size | 729.40 KB |
| Manufacturer | CEL |
| Description | HETERO JUNCTION FIELD EFFECT TRANSISTOR |
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The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another mercial systems.
View NE3210S01 datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
NE3210S01 | X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET | NEC |
| Part Number | Description |
|---|---|
| NE321000 | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
| NE350184C | HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE3509M04 | L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE3510M04 | HETERO JUNCTION FIELD EFFECT TRANSISTOR |
| NE3511S02 | X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE3512S02 | HETERO JUNCTION FIELD EFFECT TRANSISTOR |
| NE3514S02 | K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
