NE3210S01 Overview
Description
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.
Key Features
- Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz
- Gate Length: Lg ≤ 0.20 µm
- Gate Width : Wg = 160 µm
