Datasheet Details
| Part number | NE3210S01 |
|---|---|
| Manufacturer | CEL |
| File Size | 729.40 KB |
| Description | HETERO JUNCTION FIELD EFFECT TRANSISTOR |
| Datasheet |
 NE3210S01 Datasheet
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General Description
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.
excellent low noise and associated gain make it suitable for DBS and another commercial systems.
Key Features
- Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz.
- Gate Length: Lg ≤ 0.20 µm.
- Gate Width : Wg = 160 µm.