| Part Number | NE3210S01 Datasheet |
|---|---|
| Manufacturer | NEC |
| Overview |
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial .
* Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz * Gate Length: Lg ≤ 0.20 µm * Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number NE3210S01-T1 NE3210S01-T1B Supplying Form Tape & reel 1 000 pcs./reel Tape & reel 4 000 pcs./reel Marking . |
NE3210S01 Datasheet and Specifications PDF
The NE3210S01 is a X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET.
Key Specifications
| Mount Type | Surface Mount |
|---|---|
| Pins | 4 |
| Max Operating Temp | 125 °C |
| Min Operating Temp | -65 °C |
| Part Number | NE3210S01 Datasheet |
|---|---|
| Description | HETERO JUNCTION FIELD EFFECT TRANSISTOR |
| Manufacturer | CEL |
| Overview |
The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its
excellent low noise and associated gain make it suitable for DBS and another commercial .
* Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz * Gate Length: Lg ≤ 0.20 µm * Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number Supplying Form NE3210S01-T1 Tape & reel 1 000 pcs./reel NE3210S01-T1B Tape & reel 4 000 pcs./reel M. |