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NE32584C - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

General Description

The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.

Super Low Noise Figure

Key Features

  • 1994 NE32584C.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
NE32584C-SL C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE32584C-T1 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE32584C-T1A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE32584 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE32500 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. 1.78 ±0.2 1 L L PACKAGE DIMENSIONS (Unit: mm) • Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz • Gate Length : Lg d 0.2 Pm • Gate Width .. : Wg = 200 Pm 1.78 ±0.2 D 2 L 3 L 4 ORDERING INFORMATION SUPPLYING FORM STICK Tape & reel 1000 pcs./reel Tape & reel 5000 pcs./reel PART NUMBER NE32584C-SL NE32584C-T1 LEAD LENGTH L = 1.7 mm MIN. L = 1.0 r 0.2 mm L = 1.0 r 0.2 mm MARKING 1.