NE32584C-T1A Overview
The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another mercial systems. 1.78 ±0.2 1 L L PACKAGE DIMENSIONS (Unit:.
NE32584C-T1A Key Features
- Total Power Dissipation
- Drain Current
- 0.6 V -0.8 V
- Drain to Source Voltage
- V MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY VDS = 2 V ID = 10 mA
- Ambient Temperature
- ¡C DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 24 MSG
- Maximum Stable Gain
- dB MAG
- Maximum Available Gain