NE32484A-T1A Overview
Description
The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
Key Features
- Super Low Noise Figure & High Associated Gain
- Gate Length : Lg ≤ 0.25 µm
- Gate Width : Wg = 200 µm 1.78 ±0.2 NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz T 2 L 3 L 4
