NEC NE334S01
The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems.| Part No. | NE334S01 |
|---|---|
| Datasheet | NE334S01 Download |
| Manufacturer |  NEC |
| Description | C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| Buy | Stock & Price |
DESCRIPTION
2.0 ± 0.2 PACKAGE DIMENSIONS (Unit: mm)FEATURES
●● Super Low Noise Figure & High Associated Gain NF = 0.25 dB TYP., Ga = 16.0 dB TYP. at f = 4 GHz Gate Width: Wg = 280 mm 1 2. 0 ± 0. 2 ORDERING INFORMATION PART NUMBER NE334S01-T1 NE334S01-T1B SUPPLYING FORM Tape & reel 1000 pcs./reel Tape & reel 4000 pcs./reel MARKING C 4 3 0.65 TYP. 1. 2. 3. 4. Source Drain Source Gate
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID Ptot Tch Tstg 4.0 –3.0 IDSS 300 125 –65 to +125 V V mA mW °C °C 1.9 ± 0.2 1.6 0.125 ± 0.05 0.4 MAX. 4.0 ± 0.2 RECOMMENDED OPERATING CONDITION (TA = 25 °C) CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN. TYP. 2 15 MAX. 2.5 20 0 Unit V mA dBm Document No. P11139EJ3V0DS00 (3rd edition) Date Published October 1996 P Printed in Japan © 1.5 MAX. 2.0 ± 0.2 0.5 TYP. 2 C 1996 NE334S01 ELECTRICAL CHARACTER...
