Datasheet4U Logo Datasheet4U.com

NE434S01-T1 Datasheet C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

Manufacturer: NEC (now Renesas Electronics)

General Description

The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.

Its excellent low noise and high associated gain make it suitable for TVRO and another commercial systems.

1 2.0 ± 0.2 2.

Overview

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL.

Key Features

  • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. , Ga = 15.5 dB TYP. at f = 4 GHz Gate Width: Wg = 280 Pm 0. 2.