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NE434S01-T1

Manufacturer: NEC (now Renesas Electronics)

NE434S01-T1 datasheet by NEC (now Renesas Electronics).

NE434S01-T1 datasheet preview

NE434S01-T1 Datasheet Details

Part number NE434S01-T1
Datasheet NE434S01-T1_NEC.pdf
File Size 77.49 KB
Manufacturer NEC (now Renesas Electronics)
Description C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE434S01-T1 page 2 NE434S01-T1 page 3

NE434S01-T1 Overview

The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another mercial systems. PACKAGE DIMENSIONS (Unit:.

NE434S01-T1 Key Features

  • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP., Ga = 15.5 dB TYP. at f = 4 GHz Gate Width: Wg = 280 Pm
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NE434S01-T1 Distributor

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