NE434S01-T1B
DESCRIPTION
The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and another mercial systems.
1 2.0 ± 0.2
2.
PACKAGE DIMENSIONS (Unit: mm)
±
FEATURES
- - Super Low Noise Figure & High Associated Gain NF = 0.35 d B TYP., Ga = 15.5 d B TYP. at f = 4 GHz Gate Width: Wg = 280 Pm
0.
ORDERING INFORMATION
PART NUMBER NE434S01-T1 NE434S01-T1B SUPPLYING FORM Tape & reel 1000 pcs./reel Tape & reel 4000 pcs./reel MARKING E
3 0.65 TYP. 1.9 ± 0.2 1.6
1. 2. 3. 4.
Source Drain Source Gate
Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature
VDS VGS ID Ptot Tch Tstg
- 3.0 IDSS 300 125
- 65 to +125
V V m A m W q C q C
0.125 ± 0.05 0.4 MAX. 4.0 ± 0.2
REMENDED OPERATING CONDITION (TA = 25 °C)
CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN. TYP. 2...
