1 W L-band Power Gaas Hj-fet
| Part number | NE6510179A |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 77.80 KB |
| Description | 1 W L-BAND POWER GaAs HJ-FET |
| Datasheet | NE6510179A_NEC.pdf |
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The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile munication and wireless PC LAN systems. It is capable of delivering 1 W of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
NE6510179A | MEDIUM POWER GaAs HJ-FET | CEL |
See all NEC (now Renesas Electronics) datasheets
| Part Number | Description |
|---|---|
| NE6510179 | 1 W L-BAND POWER GaAs HJ-FET |
| NE6510379A | 3 W L-BAND POWER GaAs HJ-FET |
| NE651R479A | 0.4 W L-BAND POWER GaAs HJ-FET |
| NE6500379 | 3W L / S-BAND POWER GaAs MESFET |
| NE6500379A | 3W L / S-BAND POWER GaAs MESFET |
| NE6500496 | 4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE6501077 | 10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE650R279A | 0.2 W L / S-BAND POWER GaAs MES FET |
| NE650R479A | 0.4 W L / S-BAND POWER GaAs MES FET |
| NE661M04 | NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
