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NE6510179A - MEDIUM POWER GaAs HJ-FET

General Description

NEC's NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications.

Key Features

  • LOW COST.

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Datasheet Details

Part number NE6510179A
Manufacturer CEL
File Size 683.57 KB
Description MEDIUM POWER GaAs HJ-FET
Datasheet download datasheet NE6510179A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FunctionalONTINUED Characteristics NEC's 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE6510179A FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS • HIGH OUTPUT POWER: 35 dBm TYP with 5.0 V Vdc 32.5 dBm TYP with 3.5 V Vdc • HIGH LINEAR GAIN: 10 dB TYP at 1.9 GHz • LOW THERMAL RESISTANCE: 5°C/W DESCRIPTION NEC's NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 1.8 watts of output power(C/W) at 3.5 V and 3 Watts of ouptut power (CW) at 5 V with high linear gain, high efficiency, and excellent linearity.