The NE6510179A is a 1 W L-BAND POWER GaAs HJ-FET.
| Part Number | NE6510179A Datasheet |
|---|---|
| Manufacturer | NEC |
| Overview |
The NE6510179A is a 1 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 1 W of output power (CW) with h.
: Pout = +31.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +20 dBm Pout = +32.5 dBm TYP. @VDS = 3.5 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm Pout = +35.0 dBm TYP. @VDS = 5.0 V, IDset = 200 mA, f = 1 900 MHz, Pin = +25 dBm * High linear gain : GL = 15 dB TYP. @VDS = 3.5 V, IDset . |
| Part Number | NE6510179A Datasheet |
|---|---|
| Description | MEDIUM POWER GaAs HJ-FET |
| Manufacturer | CEL |
| Overview |
NEC's NE6510179A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of de.
* LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel * USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS * HIGH OUTPUT POWER: 35 dBm TYP with 5.0 V Vdc 32.5 dBm TYP with 3.5 V Vdc * HIGH LINEAR GAIN: 10 dB TYP at 1.9 GHz * LOW THERMAL RESISTANCE: 5°C/W DESCRIPTIO. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| SHENGYU ELECTRONICS | 4402 | 1+ : 1.5314 USD 10+ : 1.5008 USD 100+ : 1.45 USD 1000+ : 1.41 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| NE6510179 | NEC | 1 W L-BAND POWER GaAs HJ-FET |