Datasheet4U.com

NE3514S02 Datasheet K Band Super Low Noise Amplifier N-channel Hj-fet

Manufacturer: CEL

Overview: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL.

NE3514S02 datasheet preview

Datasheet Details

Part number	NE3514S02
Manufacturer	CEL
File Size	227.50 KB
Description	K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Datasheet	NE3514S02_CEL.pdf

Key Features

Super low noise figure and high associated gain NF = 0.75 dB TYP. , Ga = 10 dB TYP. @ f = 20 GHz.
Micro-X plastic (S02) package.

More Datasheets from CEL

Part Number	Description
NE3510M04	HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3511S02	X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE3512S02	HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE350184C	HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE3509M04	L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE321000	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
NE3210S01	HETERO JUNCTION FIELD EFFECT TRANSISTOR

NE3514S02 Distributor