NE3514S02 Overview
HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET.
NE3514S02 Key Features
- Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz
- Micro-X plastic (S02) package