• Part: NE3514S02
  • Manufacturer: CEL
  • Size: 227.50 KB
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CEL datasheets

NE3514S02 Description

HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET.

NE3514S02 Key Features

  • Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz
  • Micro-X plastic (S02) package