NE3514S02
NE3514S02 is manufactured by CEL.
HETERO JUNCTION FIELD EFFECT TRANSISTOR
K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Features
- Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz
- Micro-X plastic (S02) package
APPLICATIONS
- 20 GHz-band DBS LNB
- Other K-band munication systems
ORDERING INFORMATION
Part Number NE3514S02-T1C NE3514S02-T1D Order Number NE3514S02-T1C-A NE3514S02-T1D-A Package S02 (Pb-Free) Quantity 2 kpcs/reel 10 kpcs/reel Marking D Supplying Form
- 8 mm wide embossed taping
- Pin 4 (Gate) faces the perforation side of the tape
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Remark To order evaluation samples, contact your nearby sales office. Part number for sample...
