Part NE350184C
Description HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Category Transistor
Manufacturer CEL
Size 227.48 KB
CEL
NE350184C

Overview

  • Super low noise figure and high associated gain NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz
  • Micro-X ceramic (84C) package