NE3511S02 Description
HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3511S02 X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET.
NE3511S02 Key Features
- Super low noise figure and high associated gain NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz
- Micro-X plastic (S02) package
NE3511S02 Applications
- X to Ku-band DBS LNB
- Other X to Ku-band munication systems