NE3511S02
NE3511S02 is manufactured by CEL.
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HETERO JUNCTION FIELD EFFECT TRANSISTOR
X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Features
- Super low noise figure and high associated gain NF = 0.30 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz
- Micro-X plastic (S02) package
APPLICATIONS
- X to Ku-band DBS LNB
- Other X to Ku-band munication systems
ORDERING INFORMATION
Part Number NE3511S02-T1C NE3511S02-T1D Order Number NE3511S02-T1C-A NE3511S02-T1D-A Package S02 (Pb-Free) Quantity 2 kpcs/reel 10 kpcs/reel Marking B Supplying Form
- 8 mm wide embossed taping
- Pin 4 (Gate) faces the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office. Part...
