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NE3509M04 - L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

Key Features

  • - Super Low Noise Figure & Associated Gain : NF=0.4dB TYP. Ga=17.5dB TYP. @f=2GHz, VDS=2V,ID=10mA - Flat-lead 4-pin tin-type super mini-mold(M04) package (Pb-Free T. ).

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Datasheet Details

Part number NE3509M04
Manufacturer CEL
File Size 1.25 MB
Description L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Datasheet download datasheet NE3509M04 Datasheet

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE3509M04 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES - Super Low Noise Figure & Associated Gain : NF=0.4dB TYP. Ga=17.5dB TYP. @f=2GHz, VDS=2V,ID=10mA - Flat-lead 4-pin tin-type super mini-mold(M04) package (Pb-Free T. ) APPLICATIONS - Satellite Radio(SDARS, DMB, etc.) antenna LNA - GPS antenna LNA - LNA for Micro-wave communication system ORDERING INFORMATION Part Number NE3509M04 NE3509M04-T2 Order Number NE3509M04-A NE3509M04-T2-A Quantity 50pcs (Non reel) 3 Kpcs/reel V80 Marking Supplying Form - 8 mm wide emboss taping - Pin1(Source), Pin2(Drain) face the perforation side of the tape Remark To order evaluation samples, please contact your local NEC sales office.