NE3509M04
NE3509M04 is manufactured by CEL.
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PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Features
- Super Low Noise Figure & Associated Gain : NF=0.4dB TYP. Ga=17.5dB TYP. @f=2GHz, VDS=2V,ID=10mA
- Flat-lead 4-pin tin-type super mini-mold(M04) package (Pb-Free T. ) APPLICATIONS
- Satellite Radio(SDARS, DMB, etc.) antenna LNA
- GPS antenna LNA
- LNA for Micro-wave munication system
ORDERING INFORMATION
Part Number NE3509M04 NE3509M04-T2 Order Number NE3509M04-A NE3509M04-T2-A Quantity 50pcs (Non reel) 3 Kpcs/reel V80 Marking Supplying Form
- 8 mm wide emboss taping
- Pin1(Source), Pin2(Drain) face the perforation side of...
