NE4210M01 Description
The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another mercial systems.
NE4210M01 Key Features
- Super Low Noise Figure & High Associated Gain NF = 0.8 dB TYP., Ga = 11 dB TYP. at f = 12 GHz 6pin super minimold packag