Datasheet4U Logo Datasheet4U.com

NE4210M01 - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

General Description

The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.

Key Features

  • Super Low Noise Figure & High Associated Gain NF = 0.8 dB TYP. , Ga = 11 dB TYP. at f = 12 GHz 6pin super minimold package Gate Width: Wg = 200µm.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NE4210S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER CEL
NE41137 N-Channel GaAs Dual Gate MES FET California Eastern Laboratories
NE4558 Dual general-purpose operational amplifier Philips
NE46234 NPN SILICON RF TRANSISTOR CEL

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
NE4210S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE42484A NONLINEAR MODEL
NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE416 NPN MEDIUM POWER UHF-VHF TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE4210M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES • • • Super Low Noise Figure & High Associated Gain NF = 0.8 dB TYP., Ga = 11 dB TYP. at f = 12 GHz 6pin super minimold package Gate Width: Wg = 200µm ORDERING INFORMATION Part Number NE4210M01-T1 Package 6-pin super minimold Supplying Form Embossed tape 8 mm wide.