NE425S01 Description
The NE425S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another mercial systems. PACKAGE DIMENSIONS (Unit:.
NE425S01 Key Features
- Super Low Noise Figure & High Associated Gain NF = 0.60 dB TYP., Ga = 12.0 dB TYP. at f = 12 GHz
- Gate Length : Lg ≤ 0.20 µm
- Gate Width : Wg = 200 µm