NEC NE425S01
The NE425S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems.| Part No. | NE425S01 |
|---|---|
| Datasheet | NE425S01 Download |
| Manufacturer |  NEC |
| Description | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| Buy | Stock & Price |
DESCRIPTION
PACKAGE DIMENSIONS (Unit: mm) 2.0 ±0.2FEATURES
● Super Low Noise Figure & High Associated Gain NF = 0.60 dB TYP., Ga = 12.0 dB TYP. at f = 12 GHz● Gate Length : Lg ≤ 0.20 µm
● Gate Width : Wg = 200 µm 2. 1 0 ±0 .2 0.5 TYP. ORDERING INFORMATION PART NUMBER NE425S01-T1 NE425S01-T1B SUPPLYING FORM Tape & reel 1000 pcs./reel Tape & reel 4000 pcs./reel MARKING G G 3 0.65 TYP. 1.9 ±0.2 1.6 4
ABSOLUTE MAXIMUM RATINGS
(TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID IG Ptot Tch Tstg 4.0 –3.0 IDSS 100 165 125 –65 to +125 V V mA 1. 2. 3. 4. Source Drain Source Gate µA mW ˚C ˚C 0.125 ±0.05 0.4MAX 4.0 ±0.2 RECOMMENDED OPERATING CONDITION (TA = 25 ˚C) CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN. TYP. 2 10 MAX. 3 20 0 Unit V mA dBm Document No. P11161EJ3V0DS00 (3rd edition) Date Published October 1996 N Printed in Japan © 1.5 MAX 2.
