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NE425S01 Datasheet C To Ku Band Super Low Noise Amplifier N-channel Hj-fet

Manufacturer: NEC (now Renesas Electronics)

Overview: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The NE425S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

Its excellent low noise and high associated gain make it suitable for DBS and another mercial systems.

PACKAGE DIMENSIONS (Unit: mm) 2.0 ±0.2

Key Features

  • Super Low Noise Figure & High Associated Gain NF = 0.60 dB TYP. , Ga = 12.0 dB TYP. at f = 12 GHz.
  • Gate Length : Lg ≤ 0.20 µm.
  • Gate Width : Wg = 200 µm 2. 1 0 ±0 .2 0.5 TYP.

More Datasheets from NEC (now Renesas Electronics)

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NE425S01 Distributor