Datasheet4U Logo Datasheet4U.com

NE425S01 - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

Download the NE425S01 datasheet PDF. This datasheet also covers the NE4-25S variant, as both devices belong to the same c to ku band super low noise amplifier n-channel hj-fet family and are provided as variant models within a single manufacturer datasheet.

General Description

The NE425S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems.

Key Features

  • Super Low Noise Figure & High Associated Gain NF = 0.60 dB TYP. , Ga = 12.0 dB TYP. at f = 12 GHz.
  • Gate Length : Lg ≤ 0.20 µm.
  • Gate Width : Wg = 200 µm 2. 1 0 ±0 .2 0.5 TYP.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NE4-25S-01.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
NE4210S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER CEL
NE41137 N-Channel GaAs Dual Gate MES FET California Eastern Laboratories
NE4558 Dual general-purpose operational amplifier Philips
NE46234 NPN SILICON RF TRANSISTOR CEL

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
NE4210M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE4210S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE42484A NONLINEAR MODEL
NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE416 NPN MEDIUM POWER UHF-VHF TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE425S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. PACKAGE DIMENSIONS (Unit: mm) 2.0 ±0.2 FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.60 dB TYP., Ga = 12.0 dB TYP. at f = 12 GHz • Gate Length : Lg ≤ 0.20 µm • Gate Width : Wg = 200 µm 2. 1 0 ±0 .2 0.5 TYP. ORDERING INFORMATION PART NUMBER NE425S01-T1 NE425S01-T1B SUPPLYING FORM Tape & reel 1000 pcs./reel Tape & reel 4000 pcs./reel MARKING G G 3 0.65 TYP. 1.9 ±0.2 1.