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NE429M01 - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

General Description

The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.

Key Features

  • Super low noise figure & High associated gain NF = 0.9 dB TYP. , Ga = 10 dB TYP. @ f = 12 GHz 6-pin super minimold package Gate width: Wg = 200µm.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems. FEATURES • • • Super low noise figure & High associated gain NF = 0.9 dB TYP., Ga = 10 dB TYP. @ f = 12 GHz 6-pin super minimold package Gate width: Wg = 200µm ORDERING INFORMATION Part Number NE429M01-T1 Package 6-pin super minimold Marking V72 Supplying Form Embossed tape 8 mm wide.