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NE325S01-T1 - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

This page provides the datasheet information for the NE325S01-T1, a member of the NE4-35S C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET family.

Datasheet Summary

Description

The NE325S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons.

Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications.

Features

  • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz Noise Figure, NF (dB) NE325S01 NOISE FIGURE &.

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Datasheet Details

Part number NE325S01-T1
Manufacturer NEC
File Size 77.74 KB
Description C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Datasheet download datasheet NE325S01-T1 Datasheet
Additional preview pages of the NE325S01-T1 datasheet.

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Other Datasheets by NEC
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Full PDF Text Transcription

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www.DataSheet4U.com C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • SUPER LOW NOISE FIGURE: 0.45 dB TYP at 12 GHz Noise Figure, NF (dB) NE325S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY 24 VDS = 2 V ID = 10 mA • GATE LENGTH: ≤ 0.20 µm • GATE WIDTH: 200 µm • LOW COST PLASTIC PACKAGE Ga 16 1.0 12 0.5 8 DESCRIPTION 0 NF 1 2 4 6 8 10 14 20 4 30 The NE325S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance.
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