NE32500 Datasheet | NEC

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for mercial systems, industrial and space applications. Features - Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz - Gate Length : Lg = 0.2 µm - Gate Width : Wg = 200 µm ORDERING INFORMATION PART NUMBER NE32500 NE27200 Standard (Grade D) Special, specific (Grade C and B)...