NEC NE32500
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
| Part No. | NE32500 |
|---|---|
| Datasheet | NE32500 Download |
| Manufacturer |  NEC |
| Description | C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP |
| Buy | Stock & Price |
DESCRIPTION
NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications.FEATURES
● Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz● Gate Length : Lg = 0.2 µm
● Gate Width : Wg = 200 µm ORDERING INFORMATION PART NUMBER NE32500 NE27200 Standard (Grade D) Special, specific (Grade C and B) QUALITY GRADE
ABSOLUTE MAXIMUM RATINGS
(TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID Ptot* Tch Tstg 4.0 –3.0 IDSS 200 175 –65 to +175 V V mA mW °C °C * Chip mounted on a Alumina heatsink (size: 3 × 3 × 0.6t)ELECTRICAL CHARACTERISTICS
(TA = 25 ˚C) PARAMETER Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Thermal Resistance Noise Figure Associated Gain SYMBOL IGSO IDSS VGS(off) gm Rth* NF Ga MIN. – 20 –0.2 45 – – 11.0 TYP.
