Datasheet Details
| Part number | NE32500 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 39.82 KB |
| Description | C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP |
| Datasheet |
 NE32500 Datasheet
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General Description
NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons.
Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications.
Key Features
- Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP. , Ga = 12.5 dB TYP. at f = 12 GHz.
- Gate Length : Lg = 0.2 µm.
- Gate Width : Wg = 200 µm.