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NE32500

Manufacturer: NEC (now Renesas Electronics)

NE32500 datasheet by NEC (now Renesas Electronics).

NE32500 datasheet preview

NE32500 Datasheet Details

Part number NE32500
Datasheet NE32500_NEC.pdf
File Size 39.82 KB
Manufacturer NEC (now Renesas Electronics)
Description C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
NE32500 page 2 NE32500 page 3

NE32500 Overview

NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for mercial systems, industrial and space applications.

NE32500 Key Features

  • Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz
  • Gate Length : Lg = 0.2 µm
  • Gate Width : Wg = 200 µm
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