NE5511279A Description
The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V Radio Systems. Dies are manufactured using our NEWMOS1 technology and housed in a surface mount package. This device can deliver 40.0 dBm output power with 48% power added efficiency at 900 MHz under the 7.5 V supply voltage.
NE5511279A Key Features
- High output power
- High power added efficiency
- High linear gain
- Surface mount package
- Single supply