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NE5511279A - 7.5V OPERATION SILICON RF POWER LD-MOS FET

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Part number NE5511279A
Manufacturer NEC
File Size 44.51 KB
Description 7.5V OPERATION SILICON RF POWER LD-MOS FET
Datasheet download datasheet NE5511279A Datasheet
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Description

The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V Radio Systems.Dies are manufactured using our NEWMOS1 technology and housed in a surface mount package.This device can deliver 40.0 dBm output power with 48% power added efficiency at 900 MHz under the 7.5 V supply voltage.

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