* HIGH OUTPUT POWER: Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 V, Pout = 40.5 dBm TYP., f = 460 MHz, VDS = 7.5 V,
* HIGH POWER ADDED EFFICIENCY: ηadd = 48% TYP.

* UHF RADIO SYSTEMS
* CELLULAR REPEATERS
* TWO-WAY RADIOS
* FRS/GMRS
* FIXED WIRELESS DESCRIPTION N.

NEC's NE5511279A is an N-Channel silicon power laterally diffused MOSFET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured using NEC's NEWMOS1 technology and housed in a surface mount package. This de.

NE5510179A

NE5510279A

NE5512

NE5512D

NE5512N

NE5514

NE5514D

NE5514N

NE5517

NE5517A

NE5500179A

NE5520

NE5520279A