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  NEC Electronic Components Datasheet  

NE5511279A Datasheet

7.5 V UHF BAND RF POWER SILICON LD-MOS FET

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NEC'S 7.5 V UHF BAND NE5511279A
RF POWER SILICON LD-MOS FET
FEATURES
• HIGH OUTPUT POWER:
Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 V,
Pout = 40.5 dBm TYP., f = 460 MHz, VDS = 7.5 V,
• HIGH POWER ADDED EFFICIENCY:
ηadd = 48% TYP., f = 900 MHz, VDS = 7.5 V,
ηadd = 50% TYP., f = 460 MHz, VDS = 7.5 V,
• HIGH LINEAR GAIN:
GL = 15.0 dB TYP., f = 900 MHz, VDS = 7.5 V,
GL = 18.5 dB TYP., f = 460 MHz, VDS = 7.5 V,
• SURFACE MOUNT PACKAGE:
5.7 x 5.7 x 1.1 mm MAX
• SINGLE SUPPLY:
VDS = 2.8 to 8.0 V
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
4.2 MAX.
Source
(Bottom View)
1.5±0.2
Source
Gate
Drain
Gate
Drain
0.4±0.15
5.7 MAX.
0.8 MAX.
3.6±0.2
APPLICATIONS
• UHF RADIO SYSTEMS
• CELLULAR REPEATERS
• TWO-WAY RADIOS
• FRS/GMRS
• FIXED WIRELESS
DESCRIPTION
NEC's NE5511279A is an N-Channel silicon power laterally
diffused MOSFET specially designed as the transmission
power amplier for 7.5 V radio systems. Die are manu-
factured using NEC's NEWMOS1 technology and housed in
a surface mount package. This device can deliver 40.0 dBm
output power with 48% power added efciency at 900 MHz
using a 7.5 V supply voltage.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOL
PARAMETER
MIN
TYP
MAX UNIT
TEST CONDITIONS
Pout
ID
ηadd
GL
Pout
ID
ηadd
GL
IGSS
IDSS
Vth
Rth
gm
BVDSS
Output Power
Drain Current
Power Added Efciency
Linear Gain
Output Power
Drain Current
Power Added Efciency
Linear Gain
Gate to Source Leak Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Thermal Resistance
Transconductance
Drain to Source Breakdown Voltage
38.5
42
1.0
20
40.0
2.5
48
15.0
40.5
2.75
50
18.5
1.5
5
2.3
24
100
100
2.0
dBm
A
%
dB
dBm
A
%
dB
nA
f = 900 MHz, VDS = 7.5 V,
Pin = 27 dBm,
IDSQ = 400 mA (RF OFF)
Pin = 5 dBm
f = 460 MHz, VDS = 7.5 V,
Pin = 25 dBm,
IDSQ = 400 mA (RF OFF)
Pin = 5 dBm
VGS = 6.0 V
nA VDS = 8.5 V
V VDS = 4.8 V, IDS = 1.5 mA
°C/W Channel to Case
S VDS = 3.5 V, IDS = 900 mA
V IDSS = 15 µA
Notes:
DC performance is 100% tested. RF performance is tested on several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
California Eastern Laboratories


  NEC Electronic Components Datasheet  

NE5511279A Datasheet

7.5 V UHF BAND RF POWER SILICON LD-MOS FET

No Preview Available !

NE5511279A
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDS Drain Supply Voltage2
V 20.0
VGS Gate Supply Voltage
V 6.0
ID Drain Current
A 3.0
PTOT
Total Power Dissipation
W
20
TCH Channel Temperature
°C 125
TSTG
Storage Temperature
°C -55 to +125
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. VDS must be used under 12 V on RF operation.
P.C.B. LAYOUT (Units in mm)
79A PACKAGE
4.0
1.7
Source
Gate
Drain
RECOMMENDED OPERATING LIMITS
SYMBOLS PARAMETERS
UNITS TYP MAX
VDS Drain to Source Voltage V 7.5 8.0
VGS Gate Supply Voltage
V 2.0 3.0
IDS Drain Current1
A 2.5 3.0
PIN Input Power
dBm 27
30
f = 900 MHz, VDS = 7.5 V
ORDERING INFORMATION
PART NUMBER
QTY
NE5511279A-T1
NE5511279A-T1A
• 12 mm wide embossed taping.
• Gate pin faces the perforation side of
the tape.
• 1 Kpcs/Reel
• 12 mm wide embossed taping.
• Gate pin faces the perforation side of
the tape.
• 5 Kpcs/Reel
Through hole φ 0.2 × 33
0.5 0.5
6.1
Note:
Use rosin or other material to prevent solder from penetrating
through-holes.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
OUTPUT POWER, DRAIN CURRENT,
ηd, ηadd vs. INPUT POWER
45
f = 900 MHz
Pout
5
40 4
IDS
35 3
ηd
100
75
30
ηadd 2
50
25 1 25
20
10
15
20 25
00
30 35
Input Power,Pin (dBm)
OUTPUT POWER, DRAIN CURRENT,
ηd, ηadd vs. INPUT POWER
45
f = 460 MHz
Pout
5
40 4
IDS
35 3
ηd
30 ηadd 2
25 1
100
75
50
25
20
10
15
20 25
00
30 35
Input Power,Pin (dBm)


Part Number NE5511279A
Description 7.5 V UHF BAND RF POWER SILICON LD-MOS FET
Maker NEC
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NE5511279A Datasheet PDF






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