NE5511279A - 7.5V OPERATION SILICON RF POWER LD-MOS FET

NEC

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Datasheet Details

Part number: NE5511279A
Manufacturer: NEC
File Size: 44.51 KB
Datasheet: NE5511279A_NEC.pdf
Description: 7.5V OPERATION SILICON RF POWER LD-MOS FET

NE5511279A Product details

Description

The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V Radio Systems.Dies are manufactured using our NEWMOS1 technology and housed in a surface mount package.This device can deliver 40.0 dBm output power with 48% power added efficiency at 900 MHz under the 7.5 V supply voltage..

Features

High output power.
High power added efficiency.
High linear gain.
Surface mount package.
Single supply : Pout = 40.0 dBm TYP. (f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDset = 400 mA) : Pout = 40.5 dBm TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 25 dBm, IDset = 400 mA) : ηadd = 48% TYP. (f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDset = 400 mA) : ηadd = 50% TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 25 dBm, IDset = 400 mA) : GL = 15.0 dB TYP. (f = 900 MHz, VDS =.

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7.5V OPERATION SILICON POWER LD-MOS FET NEC

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