The NE678M04 is fabricated using NEC's HFT3 wafer process.
With a transition frequency of 12 GHz, the NE678M04 is usable in applications from 100 MHz to 3 GHz.
| Part number | NE678M04 |
|---|---|
| Manufacturer | NEC |
| File Size | 89.36 KB |
| Description | MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR |
| Datasheet |
 NE678M04 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| NE678M04 | NPN SILICON RF TRANSISTOR | CEL |
| NE67400 | (NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET | CEL |
| NE67483B | (NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET | CEL |
| NE677M04 | NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR | CEL |
| NE600 | 1GHz LNA and mixer | NXP Semiconductors |
| Part Number | Description |
|---|---|
| NE67300 | (NE67300 / NE67383) LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY |
| NE67383 | (NE67300 / NE67383) LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY |
| NE6500379 | 3W L / S-BAND POWER GaAs MESFET |
| NE6500379A | 3W L / S-BAND POWER GaAs MESFET |
| NE6500496 | 4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
