Datasheet Summary
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MEDIUM POWER NPN SILICON NE678M04 HIGH FREQUENCY TRANSISTOR
Features
- -
- - HIGH GAIN BANDWIDTH: fT = 12 GHz HIGH OUTPUT POWER: P-1dB = 18 dBm at 1.8 GHz HIGH LINEAR GAIN: GL = 13 dB at 1.8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance
+0.40-0.05 2
+0.30
2.05±0.1 1.25±0.1
2.0±0.1
R55
1.25 0.650.65
DESCRIPTION
The NE678M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 12 GHz, the NE678M04 is usable in applications from 100 MHz to 3 GHz. The NE678M04 provides P1dB of 18 dBm, even with low voltage and low current, making this device an excellent...
