NP100P06PDG Overview
The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP100P06PDG-E1-AY NP100P06PDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) Note Pb-free (This product does not contain Pb in external electrode.).
NP100P06PDG Key Features
- Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = -10 V, ID = -50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = -4.5 V, ID
- High current rating: ID(DC) = m100 A
