MOS FIELD EFFECT TRANSISTOR
P-CHANNEL POWER MOSFET
The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Pure Sn (Tin)
Tape 800 p/reel
Note Pb-free (This product does not contain Pb in external electrode.)
• Super low on-state resistance
RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A)
RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A)
• High current rating: ID(DC) = m100 A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Single Avalanche Current Note2
Single Avalanche Energy Note2
−55 to +175
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
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Document No. D18693EJ3V0DS00 (3rd edition)
Date Published May 2007 NS CP(K)
Printed in Japan
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