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NP100P06PDG Datasheet, NEC

NP100P06PDG Datasheet, NEC

NP100P06PDG

datasheet Download (Size : 210.88KB)

NP100P06PDG Datasheet

NP100P06PDG transistor equivalent, mos field effect transistor.

NP100P06PDG

datasheet Download (Size : 210.88KB)

NP100P06PDG Datasheet

Features and benefits


* Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A)
* High current rating: ID(DC) =.

Application

ORDERING INFORMATION PART NUMBER NP100P06PDG-E1-AY NP100P06PDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKIN.

Description

The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP100P06PDG-E1-AY NP100P06PDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKA.

Image gallery

NP100P06PDG Page 1 NP100P06PDG Page 2 NP100P06PDG Page 3

TAGS

NP100P06PDG
MOS
FIELD
EFFECT
TRANSISTOR
NEC

Manufacturer


NEC

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