NP100P06PDG Datasheet - NEC

MOS FIELD EFFECT TRANSISTOR

NP100P06PDG Features

* Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS =

* 10 V, ID =

* 50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS =

* 4.5 V, ID =

* 50 A)

* High current rating: ID(DC) = m100 A (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V

NP100P06PDG General Description

The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP100P06PDG-E1-AY NP100P06PDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) Note Pb-free (This product do.

NP100P06PDG Datasheet (210.88 KB)

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Datasheet Details

Part number:

NP100P06PDG

Manufacturer:

NEC

File Size:

210.88 KB

Description:

Mos field effect transistor.

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NP100P06PDG MOS FIELD EFFECT TRANSISTOR NEC

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NP100P06PDG Features

NP100P06PDG General Description

Datasheet Details

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Description:

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