VBsemi Electronics NP100P06PDG
P-Channel 60V MOSFET
| Part No. | NP100P06PDG |
|---|---|
| Datasheet | NP100P06PDG Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel 60V MOSFET |
| Buy | Stock & Price |
FEATURES
● Trench power MOSFET● Package with low thermal resistance S G Top View S D G D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current d (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current Single Pulse Avalanche Energy a Power Dissipation L = 0.1 mH IAS EAS TC = 25 °C c TA = 25 °C b PD Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case Notes a. Duty cycle ≤ 1 %. b. When mounted on 1" square PCB (FR4 material). c. See SOA curve for voltage derating. d. Limited by package. PCB mount b SYMBOL RthJA RthJC LIMIT -60 ± 20 -120 -95 -350 -75 281 375 3.75 -55 to +175 TYPICAL 40 0.4 UNIT V A mJ W °C UNIT °C/W 1 NP100P06PDG-VB SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage Gate Threshold V...
