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NP100P06PDG-VB
NP100P06PDG-VB Datasheet P-Channel 60 V (D-S) 175 °C MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
-60
0.0050 at VGS = -10 V
0.0070 at VGS = -4.5 V
TO-263
ID (A) d -120
FEATURES • Trench power MOSFET • Package with low thermal resistance
S
G
Top View
S D G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current d (TJ = 175 °C)
TC = 25 °C TC = 125 °C
ID
Pulsed Drain Current
IDM
Avalanche Current Single Pulse Avalanche Energy a
Power Dissipation
L = 0.
NP100P06PDG Datasheet
