NP100P06PDG Description
NP100P06PDG-VB NP100P06PDG-VB Datasheet P-Channel 60 V (D-S) 175 °C MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) -60 0.0050 at VGS = -10 V 0.0070 at VGS = -4.5 V TO-263 ID (A) d -120.
NP100P06PDG Key Features
- Trench power MOSFET
- Package with low thermal resistance