Part NP100P06PDG
Description MOS FIELD EFFECT TRANSISTOR
Category Transistor
Manufacturer NEC
Size 210.88 KB
Pricing from 6.12 USD, available from Newark and Renesas.
NEC

NP100P06PDG Overview

Key Specifications

Package: TO-263
Mount Type: Surface Mount
Pins: 3
Height: 4.65 mm

Description

The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = -10 V, ID = -50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = -4.5 V, ID = -50 A)
  • High current rating: ID(DC) = m100 A (TO-263)

Price & Availability

Seller Inventory Price Breaks Buy
Newark 900 1+ : 6.12 USD
10+ : 4.25 USD
25+ : 3.86 USD
50+ : 3.47 USD
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Renesas 141 1+ : 6.16 USD
10+ : 4.13 USD
100+ : 2.9805 USD
800+ : 2.54799 USD
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