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NP100P06PDG - MOS FIELD EFFECT TRANSISTOR

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NEC

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NP100P06PDG MOS FIELD EFFECT TRANSISTOR by NEC - Datasheet Preview — Datasheet preview – NP100P06PDG

Datasheet Details

Part number	NP100P06PDG
Manufacturer	NEC
File Size	210.88 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	NP100P06PDG Datasheet
Additional preview pages of the NP100P06PDG datasheet.

Product details

Description

The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS =.
10 V, ID =.
50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS =.
4.5 V, ID =.
50 A).
High current rating: ID(DC) = m100 A (TO-263).

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Published: Sep 19, 2007 |