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NP100P06PDG - MOS FIELD EFFECT TRANSISTOR

General Description

The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 50 A).
  • High current rating: ID(DC) = m100 A (TO-263).

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100P06PDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP100P06PDG-E1-AY NP100P06PDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) Note Pb-free (This product does not contain Pb in external electrode.) FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.