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NP100P02D6 - 20V P-Channel Enhancement Mode MOSFET

General Description

Schematic diagram The NP100P02D6 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications General

Key Features

  • VDS =-20V，ID =-100A RDS(ON)(Typ. )=2.5mΩ @VGS=-4.5V RDS(ON)(Typ. )=3mΩ @VGS=-2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.
  • 150 °C operating temperature.
  • 100% UIS tested Marking and pin assignment.

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Datasheet Details

Part number NP100P02D6
Manufacturer natlinear
File Size 680.45 KB
Description 20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP100P02D6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NP100P02D6 20V P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP100P02D6 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications General Features  VDS =-20V，ID =-100A RDS(ON)(Typ.)=2.5mΩ @VGS=-4.5V RDS(ON)(Typ.)=3mΩ @VGS=-2.