Part NP100P04PDG
Description MOS FIELD EFFECT TRANSISTOR
Category Transistor
Manufacturer NEC
Size 210.74 KB
Pricing from 6.13 USD, available from Newark and Renesas.
NEC

NP100P04PDG Overview

Key Specifications

Package: TO-263
Mount Type: Surface Mount
Pins: 3
Height: 4.65 mm

Description

The NP100P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = -10 V, ID = -50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = -4.5 V, ID = -50 A)
  • High current rating: ID(DC) = m100 A (TO-263)

Price & Availability

Seller Inventory Price Breaks Buy
Newark 2110 1+ : 6.13 USD
10+ : 4.26 USD
25+ : 3.87 USD
50+ : 3.47 USD
View Offer
Renesas 885 1+ : 6.17 USD
10+ : 4.136 USD
100+ : 2.9857 USD
800+ : 2.425 USD
View Offer