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NP100P04PDG Datasheet Mos Field Effect Transistor

Manufacturer: NEC (now Renesas Electronics)

Overview: www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100P04PDG SWITCHING P-CHANNEL POWER.

General Description

The NP100P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

ORDERING INFORMATION PART NUMBER NP100P04PDG-E1-AY NP100P04PDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) Note Pb-free (This product does not contain Pb in external electrode.)

Key Features

  • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 50 A).
  • High current rating: ID(DC) = m100 A (TO-263).

More Datasheets from NEC (now Renesas Electronics)

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NP100P04PDG Distributor