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NP55N04SUG - MOS FIELD EFFECT TRANSISTOR

Description

The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Channel temperature 175 degree rating.
  • Super low on-state resistance RDS(on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A).
  • Low input capacitance Ciss = 3400 pF TYP. (VDS = 25 V) (TO-252).

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Datasheet Details

Part number NP55N04SUG
Manufacturer NEC
File Size 193.43 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet NP55N04SUG Datasheet
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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP55N04SUG PACKAGE TO-252 (MP-3ZK) FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) • Low input capacitance Ciss = 3400 pF TYP. (VDS = 25 V) (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 40 ±20 ±55 ±220 77 1.
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