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NP55N04SLG - MOS FIELD EFFECT TRANSISTOR

Description

The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Channel temperature 175 degree rating.
  • Super low on-state resistance ⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) ⎯ RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 28 A) ⎯ RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 11 A).
  • Low input capacitance.
  • Gate to Source ESD protection diode built-in Ordering Information Part No. LEAD.

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Datasheet Details

Part number NP55N04SLG
Manufacturer Renesas
File Size 242.99 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet NP55N04SLG Datasheet
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NP55N04SLG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0242EJ0100 Rev.1.00 Feb 23, 2011 Description The NP55N04SLG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Channel temperature 175 degree rating • Super low on-state resistance ⎯ RDS(on)1 = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) ⎯ RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 28 A) ⎯ RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 11 A) • Low input capacitance • Gate to Source ESD protection diode built-in Ordering Information Part No. LEAD PLATING PACKING NP55N04SLG-E1-AY ∗1 NP55N04SLG-E2-AY ∗1 Pure Sn (Tin) Tape 2500 p/reel Note: ∗1. Pb-free (This product does not contain Pb in external electrode.
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